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  almd-el3d, almd-eg3d, almd-cm3d, almd-cb3d high brightness smt round led lamps amber, red, green and blue tinted leds data sheet caution: ingan devices are class 1c hbm esd sensitive; alingap devices are class 1b esd sensitive per jedec standard. please observe appropriate precautions during handling and processing. refer to application note an-1142 for additional details . features  compact form factor  high brightness material  available in red, amber, green and blue color  red alingap 626nm  amber alingap 590nm  green ingan 525nm  blue ingan 470nm  jedec msl 2a  compatible with industrial re?ow soldering process  typical viewing angle: 30  tinted, non-di?used applications  variable message signs notes: 1. all dimensions in millimeters (inches). 2. tolerance is 0.20 mm unless other speci?ed. aa cc a: anode c: cathode 4.20 0.20 4.20 0.20 4.75 0.50 6.50 0.50 2.50 0.20 3.40 0.50 a c 1.4 (4x) 1.0 description the new avago almd-xx3d led series has the same or just slightly less luminous intensity than conventional high brightness, through-hole leds. the new led lamps can be assembled using common smt assembly processes and are compatible with indus- trial re?ow soldering processes. the leds are made with an advanced optical grade epoxy for superior performance in outdoor sign applications. for easy pick and place assembly, the leds are shipped in eia-compliant tape and reel. every reel is shipped from a single intensity and color binC except the red colorCfor better uniformity. package dimensions
2 device selection guide part number color and dominant wavelength  d (nm) typ [3] luminous intensity iv (mcd) [1,2,5] viewing angle typ () [4] min max almd-eg3d-vx002 red 626 4200 9300 30 almd-el3d-vx002 amber 590 4200 9300 almd-cm3d-wy002 green 525 5500 12000 almd-cb3d-rt002 blue 470 1500 3200 notes: 1. the luminous intensity is measured on the mechanical axis of the lamp package and it is tested with pulsing condition. 2. the optical axis is closely aligned with the package mechanical axis. 3. dominant wavelength,  d, is derived from the cie chromaticity diagram and represents the color of the lamp. 4.  ? is the o?-axis angle where the luminous intensity is half the on-axis intensity. 5. tolerance for each bin limit is 15% part numbering system packaging option 02: tested 20ma, 13 inch carrier tape, 8mm pitch, 16mm carrier width color bin selection 0: full distribution maximum intensity bin refer to device selection guide minimum intensity bin refer to device selection guide untinted/tinted lens d: tinted viewing angle 3: 30 color b: blue g: red l: amber m: green package c: smt round lamp ingan e: smt round lamp alingap smt lamps almd C x x 3d C x x x xx
3 absolute maximum rating, t j = 25c parameter red and amber blue and green unit dc forward current [1] 50 30 ma peak forward current 100 [2] 100 [3] ma power dissipation 120 114 mw reverse voltage 5 (i r = 100  a) 5 (i r = 10  a) v led junction temperature 130 110 c operating temperature range -40 to +85 c storage temperature range -40 to +100 c notes: 1. derate linearly as shown in figure 4 and figure 9 2. duty factor 30%, frequency 1khz. 3. duty factor 10%, frequency 1khz. electrical / optical characteristics, t j = 25c parameter symbol min. typ. max. units test conditions forward voltage red amber green blue v f 1.8 1.8 2.8 2.8 2.1 2.1 3.2 3.2 2.4 2.4 3.8 3.8 vi f = 20 ma reverse voltage red & amber green & blue v r 5 5 vi f = 100  a i f = 10  a dominant wavelength [1] red amber green blue  d 618.0 584.5 519.0 460.0 626.0 590.0 525.0 470.0 630.0 594.5 539.0 480.0 i f = 20 ma peak wavelength red amber green blue  peak 634 594 516 464 nm peak of wavelength of spectral distribution at i f = 20 ma thermal resistance r  j-pin 130 c/w led junction-to-pin luminous e?cacy [2] red amber green blue  v 200 520 530 65 lm/w emitted luminous power/emitted radiant power thermal coe?cient of  d red amber green blue 0.059 0.103 0.028 0.024 nm/c i f = 20 ma ; +25c t j +100c notes: 1. the dominant wavelength is derived from the chromaticity diagram and represents the color of the lamp. 2. the radiant intensity, i e in watts per steradian, may be found from the equation i e = i v /  v where i v is the luminous intensity in candelas and  v is the luminous e?cacy in lumens/watt.
4 alingap figure 1. relative intensity vs wavelength figure 2. forward current vs forward voltage figure 3. relative intensity vs forward current f igure 4. maximum forward current vs ambient temperature figure 5. relative dominant wavelength shift vs forward current 0 0.2 0.4 0.6 0.8 1 500 550 600 650 wavelength - nm relative intensity 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 forward voltage - v forward current - ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 20 40 60 80 100 forward current - ma relative luminous intensity (normalized at 20ma) red 0 10 20 30 40 50 60 0 20 40 60 80 100 t a - ambient temperature (c) -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20406080100 forward current - ma relative dominant wavelength shift(normalized at 20ma) - nm red amber maximum forward current - ma red amber amber
5 ingan figure 6. relative intensity vs wavelength figure 7. forward current vs forward voltage figure 8. relative intensity vs forward current f igure 9. maximum forward current vs ambient temperature figure 10. dominant wavelength shift vs forward current 0 20 40 60 80 100 012345 forward voltage-v forward current-ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 20 40 60 80 100 120 dc forward current-ma relative luminous intensity (normalized at 20ma) green blue -10 -5 0 5 10 0 20406080100 forward current-ma relative dominant wavelength shift -nm green blue 0 5 10 15 20 25 30 35 0 20 40 60 80 100 t a - ambient temperature - c i f max - maximum forward current - ma 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 380 430 480 530 580 630 wavelength - nm relative intensity green blue
6 figure 11a. radiation pattern for x axis figure 11b. component axis for radiation pattern figure 12. relative intensity shift vs junction temperature figure 13. forward voltage shift vs junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 -90 -60 -30 0 30 60 90 angular displacement-degree normalized intensity 0.1 1 10 -40 -15 10 35 60 85 normalzied intensity (photo) red amber blue green -0.3 -0.2 -0.1 0 0.1 0.2 0.3 -40 -15 10 35 60 85 t j - junction temperature t j - junction temperature forward voltage shift-v red amber green blue xx a cc a
7 figure 14. recommended soldering land pattern note: recommended stencil thickness is 0.1524mm (6 mils) minimum and above 5.2 2.1 4.0 0.7 figure 15. recommended pick and place nozzle tip (urethane pad tip) id = 3.2mm od 5.0 mm figure 16. recommended leaded re?ow soldering pro?le figure 17. recommended pb- free re?ow soldering pro?le note: for detail information on re?ow soldering of avago surface mount led, do refer to avago application note an1060 surface m ounting smt led indicator components. 240c max. 20 sec. max. 3c/sec. max. 120 sec. max. time temperature 183c 100-150c -6c/sec. max. 60-150 sec. 3c/sec. max. 217 c 200 c 60 - 120 sec. 6 c/sec. max. 3 c/sec. max. 3 c/sec. max. 150 c 255 - 260 c 100 sec. max. 10 to 30 sec. time temperature id od
8 figure 18. carrier tape dimension 4.500.10 2.200.20 2.000.10 4.000.10 8.000.10 16.000.30 7.500.10 1.750.10 7.100.10 5.300.10 0.400.05 1.800.20 5.200.10 1.550.10 1.600.10 figure 19. reel dimension figure 20. unit orientation from reel label +0.20 -0.00 1.5 min ? 330 max ? 1000.50 16.4 13.000.20 anode
9 red color range min dom max dom x min y min x max y max 618.0 630.0 0.6872 0.3126 0.6890 0.2943 0.6690 0.3149 0.7080 0.2920 tolerance for each bin limit is 0.5nm amber color range bin min dom max dom xmin ymin xmax ymax 1 584.5 587.0 0.5420 0.4580 0.5530 0.4400 0.5370 0.4550 0.5570 0.4420 2 587.0 589.5 0.5570 0.4420 0.5670 0.4250 0.5530 0.4400 0.5720 0.4270 4 589.5 592.0 0.5720 0.4270 0.5820 0.4110 0.5670 0.4250 0.5870 0.4130 6 592.0 594.5 0.5870 0.4130 0.5950 0.3980 0.5820 0.4110 0.6000 0.3990 tolerance for each bin limit is 0.5nm intensity bin limit table (1.3:1 iv bin ratio) bin intensity (mcd) at 20ma min max r 1500 1900 s 1900 2500 t 2500 3200 u 3200 4200 v 4200 5500 w 5500 7200 x 7200 9300 y 9300 12000 z 12000 16000 tolerance for each bin limit is 15% vf bin table (v at 20ma) for red&amber bin id min max vd 1.8 2.0 va 2.0 2.2 vb 2.2 2.4 tolerance for each bin limit is 0.05v
10 green color range bin min dom max dom xmin ymin xmax ymax 1 519.0 523.0 0.0667 0.8323 0.1450 0.7319 0.1200 0.7375 0.0979 0.8316 2 523.0 527.0 0.0979 0.8316 0.1711 0.7218 0.1450 0.7319 0.1305 0.8189 3 527.0 531.0 0.1305 0.8189 0.1967 0.7077 0.1711 0.7218 0.1625 0.8012 4 531.0 535.0 0.1625 0.8012 0.2210 0.6920 0.1967 0.7077 0.1929 0.7816 5 535.0 539.0 0.1929 0.7816 0.2445 0.6747 0.2210 0.6920 0.2233 0.7600 tolerance for each bin limit is 0.5nm blue color range bin min dom max dom xmin ymin xmax ymax 1 460.0 464.0 0.1440 0.0297 0.1766 0.0966 0.1818 0.0904 0.1374 0.0374 2 464.0 468.0 0.1374 0.0374 0.1699 0.1062 0.1766 0.0966 0.1291 0.0495 3 468.0 472.0 0.1291 0.0495 0.1616 0.1209 0.1699 0.1062 0.1187 0.0671 4 472.0 476.0 0.1187 0.0671 0.1517 0.1423 0.1616 0.1209 0.1063 0.0945 5 476.0 480.0 0.1063 0.0945 0.1397 0.1728 0.1517 0.1423 0.0913 0.1327 tolerance for each bin limit is 0.5nm
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2010 avago technologies. all rights reserved. av02-2372en - march 9, 2010 disclaimer: avagos products and software are not speci?cally designed, manufactured or authorized for sale as parts, components or assemblies for the planning, construction, maintenenace or direct operation of a nuclear facility or for use in medical devices or applications. customer is solely responsible, and waives all rights to make claims against avago or its suppliers, for all loss, damage, expense or liability in connection with such use. moisture sensitivity and handling the almd-xx3d series oval package has a moisture sensitive level 2a rating per jedec j-std-020. refer to avago application note an5305, handling of moisture sensitive surface mount devices, for additional details and a review of proper handling procedures. a. storage before use  an unopened moisture barrier bag (mbb) can be stored at < 40 c/90% rh for 12 months. if the actual shelf life has exceeded 12 months and the humidity indicator card (hic) indicates that baking is not required then it is safe to re?ow solder the leds per the original msl rating.  it is recommended that the mbb not be opened prior to assembly (e.g. for iqc). b. control after opening the mbb  the humidity indicator card (hic) shall be read immediately upon opening of the mbb.  the leds must be kept at < 30 c/60% rh at all times, and all high temperature related processes including soldering, curing or rework need to be completed within 672 hours. c. control for un?nished tape and reel parts  unused leds must be stored in a sealed mbb with a desiccant or desiccator at < 5% rh. d. control of assembled boards  if the pcb soldered with the leds is to be subjected to other high temperature processes, the pcb needs to be stored in a sealed mbb with desiccant or desiccator at < 5% rh to ensure that all leds have not exceeded their ?oor life of 672 hours e. baking is required if:  the hic indicator is not brown at 10% and is azure at 5%  the leds are exposed to a condition of > 30 c/60% rh at any time.  the led ?oor life exceeded 672 hours. the recommended baking condition is: 60 5 c for 20 hours.


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